Description :

● Features:
1. Wide range of collector current.
2. High sensitivity.
3. Low cost plastic package.
4. Lens appearance: Water Clear.
5. This product doesn’t contain restriction
Substance, comply RoHS standard.
● Description:
The BPT-BP7334 is a NPN silicon
Phototransistor mounted in a lensed,
water clear plastic package.
The lensing effect of the package allows
an acceptance half view angle of 20°that
is measured from the optical to the half
power point.

Specification :

● Absolute Maximum Ratings(Ta=25℃)
Parameter Symbol Rating Unit
Power Dissipation Pd 100 mW
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector-Voltage VECO 5 V
Operating Temperature Topr -40℃~80℃ -
Storage Temperature Tstg -45℃~100℃ -
Soldering Temperature Tsol 260℃ for 5 Seconds -

● Electrical and optical characteristics(Ta=25℃)
Parameter Symbol Condition Min. Typ. Max. Unit
Collector-Emitter Breakdown
Voltage BVCEO 30 --- --- V IC=100μA,
Ee=0mW/cm²
Emitter-Collector Breakdown
Voltage BVECO 5 --- --- V Ie=100μA,
Ee=0mW/cm²
Collector-Emitter Saturation
Voltage VCE(SAT) --- --- 0.50 V IC=0.10mA,
Ee=1mW/cm²
Optical Rise Time (10% to 90%) TR --- 15 ---
Optical Fall Time (90% to 10%) TF --- 15 ---
μs
VCE=5V,
IC=1mA,
RL=1000Ω
Collector Dark Current ICEO --- --- 100 nA Ee=0mW/cm²,
VCE=10V
On State Collector Current IC(ON) --- 21.00 --- mA Ee=1mW/cm²,
VCE=5V